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1

Recent Development of Boron Nitride towards Electronic Applications

Izyumskaya, Natalia, Demchenko, Denis O., Das, Saikat, Özgür, Ümit, Avrutin, Vitaliy, Morkoç, Hadis

Journal:

Advanced Electronic Materials

Year:

2017

Language:

english

File:

PDF, 2.14 MB

english, 2017

2

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

Zhou, Lin, Leach, Jacob H., Ni, Xianfeng, Morkoc, Hadis, Smith, David J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.34 MB

english, 2010

3

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates

Kim, C. C., Choi, Y., Jang, Y. H., Kang, M. K., Joo, Minho, Noh, M. S., Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Yoon, Euijoon

Year:

2008

Language:

english

File:

PDF, 545 KB

english, 2008

4

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Gallium Nitride Materials and Devices - Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications

Sood, Ashok K., Singh, Rajwinder, Puri, Yash R., Clarke, Frederick W., Laboutin, Oleg, Deluca, Paul M., Wesler, Roger E., Deng, Jie, Hwang, James C. M., Litton, Cole W., Grote, James G., Morkoc, Hadis

Year:

2006

Language:

english

File:

PDF, 504 KB

english, 2006

5

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Comparison of different template structures for high quality and self-separation thick GaN growth

Fang, Yen-Hsiang, Chyi, Jen-Inn, Nanishi, Yasushi, Chao, Chu-Li, Chi, Tung-Wei, Morkoç, Hadis, Litton, Cole W., Chen, Kuei-Ming, Liu, Po-Chun, Piprek, Joachim, Yoon, Euijoon, Tsay, Jenq-Dar

Year:

2010

Language:

english

File:

PDF, 7.77 MB

english, 2010

6

An alternative material for transparent antennas for commercial and medical applications

Green, Ryan B., Toporkov, Mykyta, Ullah, M.D.B., Avrutin, Vitaliy, Ozgur, Umit, Morkoc, Hadis, Topsakal, Erdem

Journal:

Microwave and Optical Technology Letters

Year:

2017

Language:

english

File:

PDF, 284 KB

english, 2017

7

Optically Transparent Antennas and Filters: A Smart City Concept to Alleviate Infrastructure and Network Capacity Challenges

Green, Ryan Benjamin, Guzman, Michelle, Izioumskaia, Natalia, Ullah, MD Barkat, Hia, Supapon, Pitchford, Joshua, Timsina, Ranjita, Avrutin, Vitaliy, Ozgur, Umit, Morkoc, Hadis, Dhar, Nibir, Topsakal,

Journal:

Antennas and Propagation Newsletter, IEEE Professional Group on

Year:

2019

Language:

english

File:

PDF, 2.89 MB

english, 2019

8

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Verma, Jai K., Protasenko, Vladimir V., Islam, S. M., Xing, Huili, Jena, Debdeep

Year:

2014

Language:

english

File:

PDF, 637 KB

english, 2014

9

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Development of high-power UV LEDs for epoxy curing applications

Liu, W. H., Chyi, Jen-Inn, Nanishi, Yasushi, Chu, C. F., Cheng, C. C., Morkoç, Hadis, Litton, Cole W., Hsu, K. H., Chung, Y. T., Piprek, Joachim, Yoon, Euijoon, Wang, Y. K., Li, C. C., Chu, J. Y., Fan

Year:

2010

Language:

english

File:

PDF, 1.02 MB

english, 2010

10

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Gallium Nitride Materials and Devices XII - Recent progress of high-quality GaN substrates by HVPE method

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Nanishi, Yasushi, Schwarz, Ulrich T., Shim, Jong-In, Fujikura, Hajime, Yoshida, Takehiro, Shibata, Masatomo, Otoki, Yohei

Year:

2017

Language:

english

File:

PDF, 866 KB

english, 2017

11

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Jacob H. Leach, Mo Wu, Xianfeng Ni, Xing Li, Ümit Özgür, Hadis Morkoç, Juozas Liberis, Emilis Šermukšnis, Arvydas Matulionis, Hailing Cheng, Çagliyan Kurdak, Yong-Tae Moon

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 184 KB

english, 2010

12

High-κ dielectrics and advanced channel concepts for Si MOSFET

Mo Wu, Y. I. Alivov, Hadis Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 1.52 MB

english, 2008

13

Microwave ferrites, part 2: passive components and electrical tuning

Ümit Özgür, Yahya Alivov, Hadis Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2009

Language:

english

File:

PDF, 1.75 MB

english, 2009

14

Microwave ferrites, part 1: fundamental properties

Ümit Özgür, Yahya Alivov, Hadis Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2009

Language:

english

File:

PDF, 1.60 MB

english, 2009

15

III-Nitride semiconductor growth by MBE: Recent issues

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2001

Language:

english

File:

PDF, 2.01 MB

english, 2001

16

Effect of thermal treatment on ZnO substrate for epitaxial growth

Xing Gu, Shariar Sabuktagin, Ali Teke, Daniel Johnstone, Hadis Morkoç, Bill Nemeth, Jeff Nause

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2004

Language:

english

File:

PDF, 1.26 MB

english, 2004

17

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Gao, Haiyong, Lee, Jaesoong, Ni, Xianfeng, Leach, Jacob, Özgür, Ümit, Morkoç, Hadis, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 1.80 MB

english, 2011

18

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model

Jang, Yuseong, Jang, Dong-Hyun, Shim, Jong-In, Shin, Dong-Soo, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 2.15 MB

english, 2011

19

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Kayis, Cemil, Zhu, C. Y., Wu, Mo, Li, Xing, Özgür, Ümit, Morkoç, Hadis, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 700 KB

english, 2011

20

Luminescence properties of defects in GaN

Reshchikov, Michael A., Morkoc, Hadis

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 2.36 MB

english, 2005

21

): Theory and experiments

Chand, Naresh, Henderson, Tim, Klem, John, Masselink, W. Ted, Fischer, Russ, Chang, Yia-Chung, Morkoĉ, Hadis

Journal:

Physical Review B

Year:

1984

Language:

english

File:

PDF, 813 KB

english, 1984

22

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes

Chen, Fang-Ming, Liou, Bo-Ting, Chang, Yi-An, Chang, Jih-Yuan, Kuo, Yih-Ting, Kuo, Yen-Kuang, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi

Year:

2013

Language:

english

File:

PDF, 353 KB

english, 2013

23

Nitride Semiconductor Devices (Fundamentals and Applications) || Semiconductor Lasers: Light Amplification by Stimulated Emission of Radiation

Year:

2013

Language:

english

File:

PDF, 2.29 MB

english, 2013

24

Nitride Semiconductor Devices (Fundamentals and Applications) || The p-n Junction

Year:

2013

Language:

english

File:

PDF, 261 KB

english, 2013

25

Nitride Semiconductor Devices (Fundamentals and Applications) || Carrier Transport

Year:

2013

Language:

english

File:

PDF, 1.88 MB

english, 2013

26

Nitride Semiconductor Devices (Fundamentals and Applications) || Metal Contacts

Year:

2013

Language:

english

File:

PDF, 360 KB

english, 2013

27

Nitride Semiconductor Devices (Fundamentals and Applications) || Field Effect Transistors

Year:

2013

Language:

english

File:

PDF, 3.01 MB

english, 2013

28

Nitride Semiconductor Devices (Fundamentals and Applications) || Light-Emitting Diodes and Lighting

Year:

2013

Language:

english

File:

PDF, 2.32 MB

english, 2013

29

Nitride Semiconductor Devices (Fundamentals and Applications) || Optical Processes

Year:

2013

Language:

english

File:

PDF, 298 KB

english, 2013

30

Nitride Semiconductor Devices (Fundamentals and Applications) || General Properties of Nitrides

Year:

2013

Language:

english

File:

PDF, 2.25 MB

english, 2013

31

Nitride Semiconductor Devices (Fundamentals and Applications) || Doping: Determination of Impurity and Carrier Concentrations

Year:

2013

Language:

english

File:

PDF, 773 KB

english, 2013

32

Nitride Semiconductor Devices (Fundamentals and Applications) || Front Matter

Year:

2013

Language:

english

File:

PDF, 125 KB

english, 2013

33

Nitride Semiconductor Devices (Fundamentals and Applications) || Index

Year:

2013

Language:

english

File:

PDF, 90 KB

english, 2013

34

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2008 - San Jose, CA (Saturday 19 January 2008)] Gallium Nitride Materials and Devices III - Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS

Fan, Qian, Leach, Jacob H., Wu, Mo, Xiao, Bo, Gu, Xing, Morkoç, Hadis, Handel, Peter H., Morkoç, Hadis, Litton, Cole W., Chyi, Jen-Inn, Nanishi, Yasushi, Yoon, Euijoon

Year:

2008

Language:

english

File:

PDF, 429 KB

english, 2008

35

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - High voltage bulk GaN-based photoconductive switches for pulsed power applications

Leach, J. H., Metzger, R., Preble, E. A., Evans, K. R., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi

Year:

2013

Language:

english

File:

PDF, 345 KB

english, 2013

36

Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling

Huang, Daming, Chyi, Jen-Inn, Morkoç, Hadis

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 413 KB

english, 1990

37

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Kayis, Cemil, Zhu, C. Y., Wu, Mo, Li, X., Özgür, Ümit, Morkoç, Hadis

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 788 KB

english, 2011

38

On the Light Emission in GaN Based Heterostructures at High Injection

Ni, Xianfeng, Li, Xing, Liu, Huiyong, Izyumskaya, Natalia, Avrutin, Vitaliy, Özgür, Ümit, Morkoç, Hadis, Paskova, Tanya, Mullholland, Greg, Evans, Keith R.

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 100 KB

english, 2009

39

Investigation of Epitaxially Grown PbO, TiO2 and ZrO2 as Bridge Layers for Integration of PZT on GaN by MBE

Gu, Xing, Izyumskaya, Natalia, Avrutin, Vataliy, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 1.71 MB

english, 2006

40

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - Wide bandgap UV photodetectors: a short review of devices and applications

Omnès, Franck, Monroy, Eva, Muñoz, Elias, Reverchon, Jean-Luc, Morkoc, Hadis, Litton, Cole W.

Year:

2007

Language:

english

File:

PDF, 370 KB

english, 2007

41

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Izyumskaya, N., Liu, S. J., Okur, S., Wu, M., Avrutin, V., Özgür, Ü., Metzner, S., Bertram, F., Christen, J., Zhou, L., Smith, D. J., Morkoç, H., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek

Year:

2011

Language:

english

File:

PDF, 713 KB

english, 2011

42

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Moe, Craig G., Grandusky, James R., Chen, Jianfeng, Kitamura, Ken, Mendrick, Mark C., Jamil, Muhammad,

Year:

2014

Language:

english

File:

PDF, 246 KB

english, 2014

43

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Brault, Julien, Damilano, Benjamin, Courville, Aimeric, Leroux, Mathieu, Kahouli, Abdelkarim, Korytov,

Year:

2014

Language:

english

File:

PDF, 608 KB

english, 2014

44

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Meneghini, M., Bisi, D., Rossetto, I., De Santi, C., Stocco, A., Hilt, O., Bahat-Treidel, E., Wuerfl, J., Rampazzo, F., Meneghesso, G., Zanoni, E.

Year:

2015

Language:

english

File:

PDF, 506 KB

english, 2015

45

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Large-area bow-free n + GaN templates by HVPE for LEDs

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Leach, J. H., Shishkin, Y., Udwary, K., Preble, E. A., Evans, K. R.

Year:

2014

Language:

english

File:

PDF, 753 KB

english, 2014

46

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Cathodoluminescence spectroscopy on selectively grown GaN nanowires

Schumann, T., Gotschke, T., Limbach, F., Stoica, T., Calarco, R., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon

Year:

2011

Language:

english

File:

PDF, 14.48 MB

english, 2011

47

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - High-power UV-B LEDs with long lifetime

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Rass, Jens, Kolbe, Tim, Lobo-Ploch, Neysha, Wernicke, Tim, Mehnke, Frank, Kuhn, Christian, Enslin, Johannes, Guttmann, Martin, Reich, Christoph, Mogilat

Year:

2015

Language:

english

File:

PDF, 867 KB

english, 2015

48

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 13 February 2016)] Gallium Nitride Materials and Devices XI - Strain engineered high reflectivity DBRs in the deep UV

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Franke, A., Hoffmann, M. P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., Bobea, M., Tweedie, J., Kirste, R., Gerhold, M., Collazo, R.

Year:

2016

Language:

english

File:

PDF, 2.09 MB

english, 2016

49

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 13 February 2016)] Gallium Nitride Materials and Devices XI - Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Sato, Taketomo, Kumazaki, Yusuke, Edamoto, Masaaki, Akazawa, Masamichi, Hashizume, Tamotsu

Year:

2016

Language:

english

File:

PDF, 837 KB

english, 2016

50

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - AlGaN-based deep ultraviolet light emitting diodes with reflection layer

Khizar, M., Morkoc, Hadis, Litton, Cole W., Akhtar Raja, Yaskin M.

Year:

2007

Language:

english

File:

PDF, 289 KB

english, 2007

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